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PMDPB95XNE - MOSFET

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Very fast switching.
  • Trench MOSFET technology.
  • Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm.
  • Exposed drain pad for excellent thermal conduction.
  • ESD protection up to 1.8 kV 1.3.

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Datasheet Details

Part number PMDPB95XNE
Manufacturer NXP Semiconductors
File Size 198.98 KB
Description MOSFET
Datasheet download datasheet PMDPB95XNE Datasheet
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Full PDF Text Transcription

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PMDPB95XNE 26 September 2012 30 V dual N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Very fast switching • Trench MOSFET technology • Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm • Exposed drain pad for excellent thermal conduction • ESD protection up to 1.8 kV 1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Small brushless DC motor drive • Power management in battery-driven portables • Hard disk and computing power management 1.4 Quick reference data Table 1.
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