PMDPB95XNE
PMDPB95XNE is MOSFET manufactured by NXP Semiconductors.
26 September 2012
30 V dual N-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Very fast switching
- Trench MOSFET technology
- Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm
- Exposed drain pad for excellent thermal conduction
- ESD protection up to 1.8 k V 1.3 Applications
- Charging switch for portable devices
- DC-to-DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disk and puting power management 1.4 Quick reference data
Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 2 A; Tj = 25 °C
[1]
Quick reference data Parameter Conditions Tj = 25 °C Min -12 Typ Max 30 12 3.1 Unit V V A
Static characteristics (per transistor) drain-source on-state resistance
[1]
- 95
120 mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
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NXP Semiconductors
30 V dual N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 D1 D2 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 drain TR1 drain...
