* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV
* AEC-Q101 qualified 1.3 Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID
PMDT670UPE Datasheet (171.75 KB)
PMDT670UPE
NXP ↗ Semiconductors
171.75 KB
Mosfet.
SO T6 PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General desc.
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