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PMEG6030EVP - Schottky barrier rectifier

General Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Average forward current: IF(AV) ≤ 3 A Reverse voltage: VR ≤ 60 V Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj ≤ 175 °C 3.

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Datasheet Details

Part number PMEG6030EVP
Manufacturer NXP Semiconductors
File Size 275.06 KB
Description Schottky barrier rectifier
Datasheet download datasheet PMEG6030EVP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMEG6030EVP 4 March 2013 SO D1 28 High-temperature 60 V, 3 A Schottky barrier rectifier Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • • Average forward current: IF(AV) ≤ 3 A Reverse voltage: VR ≤ 60 V Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj ≤ 175 °C 3.