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PMGD290XN Datasheet Dual N-channel mTrenchMOS extremely low level FET

Manufacturer: NXP Semiconductors

General Description

Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

1.2

Overview

www.DataSheet4U.com PMGD290XN Dual N-channel µTrenchMOS™ extremely low level FET MBD128 Rev.

01 — 26 February 2004 Product data 1.

Product profile 1.

Key Features

  • s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage. 1.3.