* s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 0.41 W s ID ≤ 0.86 A s RDSon ≤ 350 mΩ
PMGD290XN Datasheet (122.64 KB)
PMGD290XN
NXP ↗ Semiconductors
122.64 KB
Dual n-channel mtrenchmos extremely low level fet.
www.DataSheet4U.com PMGD290XN Dual N-channel µTrenchMOS™ extremely low level FET MBD128 Rev. 01 26 February 2004 Product data 1. Product.
📁 Related Datasheet
PMGD290UCEA 725 / 500 mA N/P-channel Trench MOSFET (NXP)
PMGD290UCEA N/P-channel MOSFET (nexperia)
PMGD280UN Dual N-channel mTrenchMOS ultra low level FET (NXP Semiconductors)
PMGD130UN dual N-channel Trench MOSFET (NXP)
PMGD175XN MOSFET (NXP)
PMGD175XNE dual N-channel MOSFET (nexperia)
PMGD370XN Dual N-channel extremely low level FET (Philips)
PMGD400UN Dual N-channel uTrenchMOS ultra low level FET (NXP)
PMGD780SN Dual N-channel mTrenchMOS standard level FET (NXP Semiconductors)
PMGD8000LN Dual UTrenchMOS logic level FET (NXP Semiconductors)
