Datasheet4U Logo Datasheet4U.com

PMN42XPE - MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Fast switching.
  • Trench MOSFET technology.
  • 2 kV ESD protection 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMN42XPEA P-channel Trench MOSFET NXP
PMN42XPEA P-channel MOSFET nexperia
PMN40ENA N-channel MOSFET nexperia
PMN40ENE N-channel MOSFET nexperia
PMN40LN logic level FET NXP

Other Datasheets by NXP Semiconductors

Part Number Description
PMN40UPE MOSFET
PMN45EN enhanced logic level FET
PMN48XP MOSFET
PMN49EN N-channel TrenchMOS logic level FET
PMN20EN 6.7A N-channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMN42XPE 14 August 2012 20 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Fast switching • Trench MOSFET technology • 2 kV ESD protection 1.3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -3 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -12 - Typ - Max -20 12 -5.