PMN42XPEA Datasheet | NXP Semiconductors

SOT457 20 V, P-channel Trench MOSFET 21 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits - Fast switching - Trench MOSFET technology - 2 kV ESD protection - AEC-Q101 qualified 3. Applications - Relay driver - High-speed line driver - High-side loadswitch - Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions...