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PMN40UPEA - single P-channel Trench MOSFET

Datasheet Summary

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Fast switching.
  • Trench MOSFET technology.
  • 4 kV ESD protection.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PMN40UPEA
Manufacturer NXP
File Size 272.45 KB
Description single P-channel Trench MOSFET
Datasheet download datasheet PMN40UPEA Datasheet
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Full PDF Text Transcription

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SOT457 PMN40UPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Fast switching • Trench MOSFET technology • 4 kV ESD protection • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.
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