PSMN013-100BS Datasheet | NXP Semiconductors

21 February 2014 D2 PA K N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Product data sheet 1. General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 2. Features and benefits - - High efficiency due to low switching and conduction losses Suitable for standard level gate drive 3. Applications - - - - DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 2 Tmb = 25 °C; Fig. 1 [1] Min -55 Typ - Max 100 68 170 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; Fig. 12; Fig. 13 VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 15; Fig. 14 VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 59 83 n C 17 23.8 n C 10.8 13.9 mΩ 19.4 25 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy [1] Conditions VGS = 10 V; Tj(init) = 25 °C; ID = 68 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω Min -...