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PSMN013-100BS Datasheet

MOSFET

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PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
21 February 2014
Product data sheet
1. General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive
3. Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 100 °C;
resistance
Fig. 12; Fig. 13
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 15; Fig. 14
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
[1] - - 68 A
- - 170 W
-55 -
175 °C
-
19.4 25
- 10.8 13.9 mΩ
- 17 23.8 nC
- 59 83 nC
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NXP Semiconductors Electronic Components Datasheet

PSMN013-100BS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; Tj(init) = 25 °C; ID = 68 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω
[1] Continuous current is limited by package
Min Typ Max Unit
- - 127 mJ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain[1]
3 S source
mb D
mounting base; connected to
drain
2
13
D2PAK (SOT404)
[1] It is not possible to make connection to pin 2.
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN013-100BS
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
7. Marking
Table 4. Marking codes
Type number
PSMN013-100BS
Marking code
PSMN013-100BS
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
PSMN013-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 February 2014
Min Max Unit
- 100 V
- 100 V
© NXP N.V. 2014. All rights reserved
2 / 13


Part Number PSMN013-100BS
Description MOSFET
Maker NXP Semiconductors
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