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PSMN013-100XS Datasheet

MOSFET

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PSMN013-100XS
N-channel 100V 13 mstandard level MOSFET in TO220F
(SOT186A)
Rev. 2 — 6 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Isolated package
Suitable for standard level gate drive
1.3 Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 10 A; VDS = 50 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 35.2 A;
Vsup 100 V; unclamped; RGS = 50 ;
see Figure 3
Min Typ Max Unit
- - 100 V
- - 35.2 A
- - 48.4 W
- 10.8 13.9 m
- 17.5 - nC
- 57.5 - nC
- - 180 mJ


NXP Semiconductors Electronic Components Datasheet

PSMN013-100XS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN013-100XS
N-channel 100V 13 mstandard level MOSFET in TO220F (SOT186A)
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
mounting base; isolated
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT186A (TO-220F)
Table 3. Ordering information
Type number
Package
Name
PSMN013-100XS
TO-220F
4. Limiting values
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot
Tstg
Tj
Tsld(M)
total power dissipation
storage temperature
junction temperature
peak soldering temperature
Tmb = 25 °C; see Figure 2
Min Max Unit
- 100 V
- 100 V
-20 20 V
- 35.2 A
- 24.9 A
- 141 A
- 48.4 W
-55 175 °C
-55 175 °C
- 260 °C
PSMN013-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
2 of 15


Part Number PSMN013-100XS
Description MOSFET
Maker NXP Semiconductors
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