PSMN013-100XS Datasheet | NXP Semiconductors

TO -2 20F N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 2 - 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Isolated package - Suitable for standard level gate drive 1.3 Applications - AC-to-DC power supply equipment - Motor control - Server power supplies - Synchronous rectification 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge total gate charge non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 10 A; VDS = 50 V; see Figure 14; see Figure 15 Min Typ 10.8 Max 100 35.2 48.4 13.9 Unit V A W mΩ Static characteristics Dynamic characteristics QGD QG(tot) EDS(AL)S 17.5 57.5 180 n C n C m J Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 35.2 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω; see Figure 3 NXP Semiconductors N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S gate drain source mounting base; isolated mbb076 Simplified outline mb Graphic symbol 1 2 3 SOT186A...