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Philips Semiconductors
PSMN015-110P
TrenchMOS™ Standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
PSMN015-110P TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS source (diode forward) current (DC) Tmb = 25 °C
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 36 A;
tp = 0.11 ms; VDD ≤ 50 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C
Min Max Unit
- 110 V
- 110 V
- ±20 V
- 75 A
- 60.8 A
- 240 A
- 300 W
−55 +175 °C
−55 +175 °C
- 75 A
- 240 A
- 320 mJ
9397 750 12544
Product data
Rev. 01 — 08 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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