PSMN015-110P Datasheet | Nexperia

description Silicon MAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only. 1.2 Features and benefits - Low conduction losses due to low on-state resistance - Simple gate drive required due to low gate charge 1.3 Applications - DC-to-DC convertors - Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Dynamic characteristics QGD gate-drain charge Static characteristics RDSon drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit - - 110 V - - 75 A - - 300 W VGS = 10 V; ID = 75 A; VDS = 80 V; Tj = 25 °C; see Figure 11 - 35 - n C VGS = 10 V; ID = 25 A; - 12 15 mΩ Tj = 25 °C; see Figure 9 and 10 Nexperia 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base; connected to drain N-channel Trench MOS Silicon MAX standard level FET Simplified outline mb Graphic symbol G mbb076 S 3. Ordering information SOT78 (TO-220AB) Table 3. Ordering...