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PSMN015-110P - TrenchMOS FET

General Description

SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

Key Features

  • s Low on-state resistance s Low gate charge. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PSMN015-110P TrenchMOS™ Standard level FET Rev. 01 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package. 1.2 Features s Low on-state resistance s Low gate charge. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 300 W s ID ≤ 75 A s RDSon ≤ 15 mΩ 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT78, simplified outlines and symbol Simplified outline mb Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol d g s MBB076 MBK106 1 2 3 SOT78 (TO-220AB) www.DataSheet4U.