| Part Number | PSMN015-110P |
|---|---|
| Manufacturer | Nexperia |
| Overview |
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communi.
and benefits
* Low conduction losses due to low on-state resistance * Simple gate drive required due to low gate charge 1.3 Applications * DC-to-DC convertors * Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter VDS drain-source voltage ID drain curre. |
PSMN015-110P Datasheet
The PSMN015-110P is a N-channel MOSFET.
| Part Number | PSMN015-110P |
|---|---|
| Description | TrenchMOS FET |
| Manufacturer | NXP Semiconductors |
| Overview | SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package. 1.2 Features s Low on-state resistance s Low gate charge. 1.3 Ap. s Low on-state resistance s Low gate charge. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 300 W s ID ≤ 75 A s RDSon ≤ 15 mΩ 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT78, simplified outlines and symbol Simplified o. |