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PSMN1R5-30YL - N-channel MOSFET

General Description

Logic level N-channel MOSFET in LFPAK package qualified to 175 °C.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Key Features

  • Advanced TrenchMOS provides low RDSon and low gate charge.
  • High efficiency gains in switching power convertors.
  • Improved mechanical and thermal characteristics.
  • LFPAK provides maximum power density in a Power SO8 package 1.3.

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Datasheet Details

Part number PSMN1R5-30YL
Manufacturer NXP Semiconductors
File Size 473.56 KB
Description N-channel MOSFET
Datasheet download datasheet PSMN1R5-30YL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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w w w . D a t a S h e e t . c o . k r PSMN1R5-30YL N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK Rev. 01 — 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS provides low RDSon and low gate charge  High efficiency gains in switching power convertors  Improved mechanical and thermal characteristics  LFPAK provides maximum power density in a Power SO8 package 1.3 Applications  DC-to-DC converters  Lithium-ion battery protection  Load switching  Motor control  Server power supplies 1.