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PSMN8R5-100ES Datasheet

MOSFET

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PSMN8R5-100ES
N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK
11 October 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
1.3 Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tj = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 13; Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
[1]
[1] Continious current limited by package.
Min Typ Max Unit
- - 100 V
- - 100 A
- - 263 W
- 6.4 8.5 mΩ
- 33 - nC
- 111 - nC
- - 219 mJ
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NXP Semiconductors Electronic Components Datasheet

PSMN8R5-100ES Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN8R5-100ES
N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
123
I2PAK (SOT226)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN8R5-100ES
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
4. Marking
Table 4. Marking codes
Type number
PSMN8R5-100ES
Marking code
PSMN8R5-100ES
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID drain current
VGS = 10 V; Tj = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
PSMN8R5-100ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 October 2012
[1]
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 100 A
- 75 A
- 429 A
- 263 W
-55 175 °C
© NXP B.V. 2012. All rights reserved
2 / 14


Part Number PSMN8R5-100ES
Description MOSFET
Maker NXP Semiconductors
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