PSMN8R5-100ES Datasheet | NXP Semiconductors

description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for standard level gate drive sources 1.3 Applications - AC-to-DC power supply equipment - Motor control - Server power supplies - Synchronous rectification 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 13; Fig. 12 VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 33 111 n C n C [1] Min - Typ - Max 100 100 263 Unit V A W Static characteristics drain-source on-state resistance 6.4 8.5 mΩ Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge Avalanche Ruggedness non-repetitive drainsource avalanche energy [1] VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 - - 219 m J Continious current limited by package. Scan or click this QR code to view the latest information for this product NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 1 2 3 Simplified outline mb Graphic symbol G mbb076 I2PAK (SOT226) 3. Ordering information Table 3. Ordering information Package Name PSMN8R5-100ES I2PAK Description plastic single-ended package (I2PAK); TO-262 Version SOT226 Type number 4. Marking Table 4. Marking codes Marking code PSMN8R5-100ES Type number...