Nexperia PSMN8R5-100PS
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.| Part No. | PSMN8R5-100PS |
|---|---|
| Datasheet | PSMN8R5-100PS Download |
| Manufacturer |  Nexperia |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High efficiency due to low switching and conduction losses● Suitable for standard level gate drive sources 3.
APPLICATIONS
● AC-to-DC power supply equipment● Motor control
● Server power supplies
● Synchronous rectification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tj = 25 °C; VGS = 10 V; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 13; Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 Avalanche Ruggedness EDS(AL)S non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 [1] [1] Continious current limited by package. Min Typ Max Unit - - 100 V - - 100 A - - 263 W 4.5 6.4 8.5 mΩ - 33 - nC - 111 - nC - - 219 mJ Nexperia PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 5.
