NXP Semiconductors PSMN8R5-100PS
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.| Part No. | PSMN8R5-100PS |
|---|---|
| Datasheet | PSMN8R5-100PS Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
●● High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 3.
APPLICATIONS
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● AC-to-DC power supply equipment Motor control Server power supplies Synchronous rectification 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 13; Fig. 12 VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 33 111 nC nC [1] Min - Typ - Max 100 100 263 Unit V A W Static characteristics drain-source on-state resistance 4.5 6.4 8.5 mΩ Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge Avalanche Ruggedness non-repetitive drainsource avalanche energy [1] VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 - - 219 mJ Continious current limited by package.
