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PSMN8R5-100XS Datasheet

MOSFET

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PSMN8R5-100XS
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F
(SOT186A)
29 November 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to
175C. This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses
Isolated package
Suitable for standard level gate drive
1.3 Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 100 °C;
Fig. 13
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 10 A; VDS = 50 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 49 A
- - 55 W
4.5 6.4 8.5 mΩ
- 11.18 14.9 mΩ
- 30 - nC
- 100 - nC
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NXP Semiconductors Electronic Components Datasheet

PSMN8R5-100XS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN8R5-100XS
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; Tj(init) = 25 °C; ID = 49 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω;
Fig. 3
Min Typ Max Unit
- - 439 mJ
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 D drain
3 S source
mb mounting base; isolated
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
1 23
TO-220F (SOT186A)
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN8R5-100XS
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
4. Marking
Table 4. Marking codes
Type number
PSMN8R5-100XS
Marking code
PSMN8R5-100XS
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
PSMN8R5-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 November 2012
Min Max Unit
- 100 V
© NXP B.V. 2012. All rights reserved
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Part Number PSMN8R5-100XS
Description MOSFET
Maker NXP Semiconductors
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