PSMN8R5-100PS
description
Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment.
2. Features and benefits
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High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
3. Applications
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AC-to-DC power supply equipment Motor control Server power supplies Synchronous rectification
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 13; Fig. 12 VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 33 111 n C n C
[1]
Min
- Typ
- Max 100 100 263
Unit V A W
Static characteristics drain-source on-state resistance 4.5 6.4 8.5 mΩ
Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate...
