PSMN8R5-100XS
Overview
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
- High efficiency due to low switching and conduction losses
- Isolated package
- Suitable for standard level gate drive 1.3 Applications
- AC-to-DC power supply equipment
- Motor control
- Server power supplies
- Synchronous rectification 1.4 Quick reference data Table
- Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 12; Fig. 13 VGS = 10 V; ID = 10 A; Tj = 100 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 10 A; VDS = 50 V; Fig. 14; Fig. 15 30 100 nC nC 11.18 14.9 mΩ Min Typ Max 100 49 55 Unit V A W Static characteristics drain-source on-state resistance 4.5 6.4 8.5 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors
