PSMN9R5-100BS Datasheet | NXP Semiconductors

D2 PA K N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Rev. 2 - 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for standard level gate drive 1.3 Applications - DC-to-DC converters - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 60 A; VDS = 50 V; see Figure 14;see Figure 15 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 8.16 Max 100 89 211 175 9.6 Unit V A W °C mΩ Static characteristics Dynamic characteristics QGD QG(tot) EDS(AL)S 23 82 177 n C n C m J Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 89 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω NXP Semiconductors N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain 2 1 3 mb Simplified outline Graphic symbol G mbb076 SOT404...