Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
40NDD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It
2
Values 40 63 900 7.2
Units A A A kA s
2
M1.
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40NDD. For precise diagrams, tables, and layout, please refer to the original PDF.
Naina Semiconductor emiconductor Ltd. Diode – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures Hig...
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on for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 40NDD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It 2 Values 40 63 900 7.2 Units A A A kA s 2 M1 PACKAGE Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 - to +
40NDD Datasheet
