40NSF - Fast Recovery Diodes

Naina Semiconductor

Datasheet Details

Diffused Series.
Industrial grade.
Available in Normal and Reverse polarity.
Optional Avalanche Characteristic 40NSF(R) Electrical Specifications (TE = 250C, unless otherwise noted) Symbol IF(AV) VFM IFSM IFRM It Trr 2 Parameters Maximum avg. forward current @ TE = 0 150 C Maximum peak forward voltage drop @ rated IF(AV) Maximum peak one cycle (non-rep) rep) surge current @ 10 msec Maximum peak repetitive surge current 2 Maximum I t rating (non-rep) rep) f.

📁 40NSF Similar Datasheet

40N03 - N-Channel Enhancement Mode PowerMos FET (SeCoS)
40N03GP - N-channel Enhancement-mode Power MOSFET (Advanced Power Electronics)
40N03P - SSM40N03P (Silicon Standard)
40N05 - N-Channel MOSFET Transistor (Inchange Semiconductor)
40N06 - N-Channel MOSFET Transistor (Inchange Semiconductor)
40N10 - N-Channel MOSFET (VBsemi)
40N10B - N-CHANNEL MOSFET (CHONGQING PINGYANG)
40N10F - N-CHANNEL MOSFET (CHONGQING PINGYANG)

Other Datasheets by Naina Semiconductor

Published: Dec 7, 2011 |