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AQY410SX - GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type

Features

  • a very small off state leakage current of 1nA even with the rated load voltage of 350 V (AQY410S). (4-pin) Approx. 70% Volume mm inch Footprint 1 4 Approx. 70% 2 3 2. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS   ,     Passivation membrane Intermediate Source electrode Gate electrode insul.

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Datasheet Details

Part number AQY410SX
Manufacturer Nais
File Size 86.33 KB
Description GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type
Datasheet download datasheet AQY410SX Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com TESTING GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type (6-pin) 4.3±0.2 .169±.008 4.4±0.2 .173±.008 2.1±0.2 .083±.008 PhotoMOS RELAYS 3. Tape and reel The device comes standard in a tape and reel (1,000 pcs./reel) to facilitate automatic insertion machines. 4. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 5. Low-level off state leakage current In contrast to the SSR with an off state leakage current of several milliamps, the PhotoMOS relay features a very small off state leakage current of 1nA even with the rated load voltage of 350 V (AQY410S). (4-pin) Approx. 70% Volume mm inch Footprint 1 4 Approx. 70% 2 3 2.
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