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EM28C1604C3FL - Flash and SRAM Combo Memory

General Description

The EM28C1604C3FL, a combination of Flash and SRAM memory, provides a compact, low-power solution for systems where PCB real estate is at a premium.

Key Features

  • Organization:.
  • 1,048K x 16 (Flash) 256K x 16 (SRAM) Basic configuration: Flash Thirty-nine erase blocks.
  • Eight 4K-word parameter blocks.
  • Thirty-one 32K-word main memory blocks SRAM 4Mb SRAM for data storage.
  • 256K-words F_VCC, VCCQ, F_VPP, S_VCC voltages 2.7V (MIN)/3.3V (MAX) F_VCC read voltage 2.7V (MIN)/3.3V (MAX) S_VCC read voltage 2.2V (MIN)/3.3V (MAX) VCCQ 1.8V (.

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Datasheet Details

Part number EM28C1604C3FL
Manufacturer NanoAmp Solutions
File Size 385.03 KB
Description Flash and SRAM Combo Memory
Datasheet download datasheet EM28C1604C3FL Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1604C3FL Advance Information EM28C1604C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY www.datasheet4u.com FEATURES • • Organization: • • • • • • • • 1,048K x 16 (Flash) 256K x 16 (SRAM) Basic configuration: Flash Thirty-nine erase blocks – Eight 4K-word parameter blocks – Thirty-one 32K-word main memory blocks SRAM 4Mb SRAM for data storage – 256K-words F_VCC, VCCQ, F_VPP, S_VCC voltages 2.7V (MIN)/3.3V (MAX) F_VCC read voltage 2.7V (MIN)/3.3V (MAX) S_VCC read voltage 2.2V (MIN)/3.3V (MAX) VCCQ 1.8V (TYP) F_VPP (in-system PROGRAM/ERASE) 12V ±5% (HV) F_VPP (production programming compatibility) 1.