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N04M1618L1A - 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

Description

1 A B C D E F G H LB# I/O8 I/O9 VSS VCC 2 OE# UB# I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1# I/O1 I/O3 I/O4 I/O5 WE# A11 6 CE2 I/O0 I/O2 VCCQ VSS I/O6 I/O7 NC Pin Name A0-A17 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VCCQ VSS NC Pin Function Address Inpu

Features

  • Dual Power Supply for lowest power 1.4 to 2.3 Volts - VCC 1.4 to 3.6 Volts - VCCQ.
  • Very low standby current 400nA at 2.0V and 37 deg C Maximum.
  • Very low operating current 0.7mA at 1.8V and 1µs (Typical).
  • Low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.2V.

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Datasheet Details

Part number N04M1618L1A
Manufacturer NanoAmp Solutions
File Size 287.47 KB
Description 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
Datasheet download datasheet N04M1618L1A Datasheet
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Full PDF Text Transcription

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04M1618L1A www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit Overview The N04M1618L1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device is a 4 megabit memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp’s N04M1618L2A, which has further reliability processing for life-support (Class 3) medical applications.
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