4Mb Datasheet | Specifications & PDF Download

SIT3088E 3.0V~5.5V, 15KV HBM ESD-Protected, 14Mbps Half-Duplex RS485/RS422 Transceiver FEATURES OUTLINE ➢ 3.0V~5.5V Wide Power Range, Half-Duplex

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RTL8304MB-CG SINGLE-CHIP 4-PORT 10/100M ETHERNET SWITCH CONTROLLER DATASHEET (CONFIDENTIAL: Development Partners Only) Rev. 1.0 26 May 2014 Track ID:

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64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.1 History Initi

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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsu

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04L1618C2A www.D

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64Mb Synchronous DRAM Specification P2V64S40ETP Deutron Electronics Corp. 8F, 68, SEC. 3, NANKING E. RD., TAIPEI 104, TAIWAN, R. O. C. TEL : 886-2-251

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W956D8MBYA / W956A8MBYA 64Mb HyperRAM Table of Contents- 1. FEATURES

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PRODUCT SPECIFICATION www.DataSheet4U.com Integrated Circuits Group LH28F640BFHE-PBTL70A Flash Memory 64Mbit (4Mbitx16) (Model Number: LHF64FG8 Spec

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Ascend Semiconductor Corporation 64Mb SDRAM ASCEND ASCEND Semiconductor Semiconductor 64M 64M SDRAM SDRAM Data Data sheet sheet Tel: (03)5635888 / F

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M58WR064ET M58WR064EB 64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Pr

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www.DataSheet4U.com LHF64P01 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, fu

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4MBI900VB-120R1-50 IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package ■ Features Higher efficiency Optimized Advanced T-

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M27C320 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM PRELIMINARY DATA s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 80ns BYTE-WIDE or WORD-W

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M29DW640D 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to

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M58LV064A M58LV064B 64 Mbit (4Mb x16 or 2Mb x32, Uniform Block, Burst) 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY s WIDE DATA BUS for

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M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to

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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsu

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SPECIFICATION Device Name : Type Name : Spec. No. : IGBT Module 4MBI200T-060 MS5F 05498 Jun 16 ‘03 K.Muramatsu Jun 17 ‘03 T.Miyasaka T.Fujihira K.Y

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S26KL512S, S26KS512S, S26KL256S, S26KS256S, S26KL128S, S26KS128S 512 Mb (64 MB) / 256 Mb (32 MB) / 128 Mb (16 MB) HYPERFLASH™ family HYPERBUS™, 3.0 V

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ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features lLOW POWER CONSUMPTION. lPOPULAR T-1 DIAMETER PACKAGE. l

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