GS81302T11E, GS81302T06E-500 Datasheet - GSI Technology

GS81302T11E, GS81302T06E-500, 144Mb SigmaDDR-II+ Burst of 2 SRAM

GS81302T06/11/20/38E-500/450/400/350 165-Bump BGA Commercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 500 MHz *350 MHz 1.8 .
Table Symbol Description Type Comments SA Synchronous Address Inputs Input. R/W Synchronous Read/Write Input High: Read Low: Write.

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GS81302T06E-500-GSITechnology.pdf

GS81302T11E Datasheet Preview — This datasheet PDF includes multiple part numbers: GS81302T11E, GS81302T06E-500. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

GS81302T11E, GS81302T06E-500

Manufacturer:

GSI Technology

File Size:

216.98 KB

Description:

144Mb SigmaDDR-II+ Burst of 2 SRAM

Note:

This datasheet PDF includes multiple part numbers: GS81302T11E, GS81302T06E-500.
Please refer to the document for exact specifications by model.

Features

* 2.5 Clock Latency
* Simultaneous Read and Write SigmaDDRTM Interface
* JEDEC-standard pinout and package
* Double Data Rate interface
* Byte Write controls sampled at data-in time
* Burst of 2 Read and Write
* On-Die Termination (ODT) on Data

Applications

* Therefore, the SigmaDDR-II+ SRAM interface and truth table are optimized for burst reads and writes. Common I/O SRAMs are unpopular in applications where alternating reads and writes are needed because bus turnaround delays can cut high speed Common I/O SRAM data bandwidth in half. Burst Operations

GS81302T11E Distributors

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GS81302T06E-500 144Mb SigmaDDR-II + Burst SRAM GSI Technology

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