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GS8161E18

(GS8161E18 - GS8161E36) Sync Burst SRAMs

GS8161E18 Features

* FT pin for user-configurable flow through or pipeline operation

* Dual Cycle Deselect (DCD) operation

* IEEE 1149.1 JTAG-compatible Boundary Scan

* 2.5 V or 3.3 V +10%/

* 10% core power supply

* 2.5 V or 3.3 V I/O supply

* LBO pin for Linear or

GS8161E18 General Description

Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchrono.

GS8161E18 Datasheet (936.23 KB)

Preview of GS8161E18 PDF

Datasheet Details

Part number:

GS8161E18

Manufacturer:

GSI

File Size:

936.23 KB

Description:

(gs8161e18 - gs8161e36) sync burst srams.

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GS8161E18 GS8161E18 GS8161E36 Sync Burst SRAMs GSI

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