GS8161E18 (GS8161E18 - GS8161E36) Sync Burst SRAMs

GSI

Description

www.DataSheet4U.com GS8161E18(T/D)/GS816132(D)/GS816136(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp .
Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

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Datasheet Specifications

Part number: GS8161E18
Manufacturer: GSI
File Size: 936.23 KB
Datasheet: GS8161E18_GSI.pdf
Description: (GS8161E18 - GS8161E36) Sync Burst SRAMs

Features

* FT pin for user-configurable flow through or pipeline operation
* Dual Cycle Deselect (DCD) operation
* IEEE 1149.1 JTAG-compatible Boundary Scan
* 2.5 V or 3.3 V +10%/
* 10% core power supply
* 2.5 V or 3.3 V I/O supply
* LBO pin for Linear or

Applications

* JEDEC-standard 100-lead TQFP and 165-bump BGA packages 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 250 MHz
* 133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cyc

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📁 Related Datasheet

GS8161E18B GS8161E18D GS8161E18DD GS8161E18DGT GS8161E32B GS8161E32D

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GS8161E18 GS8161E18 GS8161E36 Sync Burst SRAMs GSI

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