GS8161E18D Datasheet (GSI Technology)

GS8161E18D, 18Mb SyncBurst SRAMs

Applications The GS8161E18D(GT/D)/GS8161E32D(D)/GS8161D36D(GT/D) is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in syn

GS8161E18D Features

* FT pin for user-configurable flow through or pipeline operation

* Dual Cycle Deselect (DCD) operation

* IEEE 1149.1 JTAG-compatible Boundary Scan

* 2.5 V or 3.3 V +10%/

* 10% core power supply

* 2.5 V or 3.3 V I/O supply

* LBO pin for Linear or