GS8161E18D 18Mb SyncBurst SRAMs

GSI Technology

Description

GS8161E18D(GT/D)/GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb SyncB.
Applications The GS8161E18D(GT/D)/GS8161E32D(D)/GS8161D36D(GT/D) is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address cou.

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GS8161E18D Datasheet Preview — Preview of GS8161E18D PDF

Datasheet Specifications

Part number: GS8161E18D
Manufacturer: GSI Technology
File Size: 1.19 MB
Datasheet: GS8161E18D-GSITechnology.pdf
Description: 18Mb SyncBurst SRAMs

Features

* FT pin for user-configurable flow through or pipeline operation
* Dual Cycle Deselect (DCD) operation
* IEEE 1149.1 JTAG-compatible Boundary Scan
* 2.5 V or 3.3 V +10%/
* 10% core power supply
* 2.5 V or 3.3 V I/O supply
* LBO pin for Linear or

Applications

* JEDEC-standard 165-bump BGA package

GS8161E18D Distributors

📁 Related Datasheet

GS8161E18 GS8161E32 GS8161E36 GS816118 GS816118B GS816132

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GS8161E18D 18Mb SyncBurst SRAMs GSI Technology

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