Description
www.DataSheet4U.com GS8161E18(T/D)/GS816132(D)/GS816136(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp .
Applications
The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.
Features
* FT pin for user-configurable flow through or pipeline operation
* Dual Cycle Deselect (DCD) operation
* IEEE 1149.1 JTAG-compatible Boundary Scan
* 2.5 V or 3.3 V +10%/
* 10% core power supply
* 2.5 V or 3.3 V I/O supply
* LBO pin for Linear or
Applications
* JEDEC-standard 100-lead TQFP and 165-bump BGA packages
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
250 MHz
* 133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O
with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cyc
