GS8161E18B (GS8161E18B - GS8161E36B) Sync Burst SRAMs

GSI Technology

Description

GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp .
Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counte.

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Datasheet Specifications

Part number: GS8161E18B
Manufacturer: GSI Technology
File Size: 1.99 MB
Datasheet: GS8161E18B_GSITechnology.pdf
Description: (GS8161E18B - GS8161E36B) Sync Burst SRAMs

Features

* FT pin for user-configurable flow through or pipeline operation
* Dual Cycle Deselect (DCD) operation
* IEEE 1149.1 JTAG-compatible Boundary Scan
* 2.5 V or 3.3 V +10%/
* 10% core power supply
* 2.5 V or 3.3 V I/O supply www. DataSheet4U. com
* L

Applications

* JEDEC-standard 100-lead TQFP package
* RoHS-compliant 100-lead TQFP and 165-bump BGA packages available 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 250 MHz
* 150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Linear Burst Order (LBO) input. The Burst function need not b

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GS8161E18 GS8161E32 GS8161E36 GS816118 GS816118B GS816132

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GS8161E18B GS8161E18B GS8161E36B Sync Burst SRAMs GSI Technology

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