GS8161E18B

(GS8161E18B - GS8161E36B) Sync Burst SRAMs

GSI Technology

GS8161E18B Features

* FT pin for user-configurable flow through or pipeline operation

* Dual Cycle Deselect (DCD) operation

* IEEE 1149.1 JTAG-compatible Boundary Scan

* 2.5 V or 3.3 V +10%/

* 10% core power supply

* 2.5 V or 3.3 V I/O supply www.DataSheet4U.com

* L

GS8161E18B General Description

Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchr.

GS8161E18B Datasheet (1.99 MB)

GS8161E18B Datasheet Preview — Preview of GS8161E18B PDF

Datasheet Details

Part number:

GS8161E18B

Manufacturer:

GSI Technology

File Size:

1.99 MB

Description:

(gs8161e18b - gs8161e36b) sync burst srams.

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GS8161E18B GS8161E18B GS8161E36B Sync Burst SRAMs GSI Technology

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GS8161E18B Features

GS8161E18B General Description

Datasheet Details

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