GS8161E18B - (GS8161E18B - GS8161E36B) Sync Burst SRAMs

GSI Technology

GS8161E18B Datasheet Preview — Preview of GS8161E18B PDF

Datasheet Details

Part number	GS8161E18B
Manufacturer	GSI Technology
File Size	1.99 MB
Description	(GS8161E18B - GS8161E36B) Sync Burst SRAMs
Datasheet	GS8161E18B_GSITechnology.pdf

GS8161E18B Product details

Description

Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Features

FT pin for user-configurable flow through or pipeline operation.
Dual Cycle Deselect (DCD) operation.
IEEE 1149.1 JTAG-compatible Boundary Scan.
2.5 V or 3.3 V +10%/.
10% core power supply.
2.5 V or 3.3 V I/O supply www. DataSheet4U. com.
LBO pin for Linear or Interleaved Burst mode.
Internal input resistors on mode pins allow floating mode pins.
Default to Interleaved Pipeline mode.
Byte Write (BW) and/or Glo.

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Other Datasheets by GSI Technology

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Published: Nov 17, 2008 |