GS8161E18DD

18Mb SyncBurst SRAMs

GSI Technology

GS8161E18DD Features

* FT pin for user-configurable flow through or pipeline operation

* Dual Cycle Deselect (DCD) operation

* IEEE 1149.1 JTAG-compatible Boundary Scan

* 2.5 V or 3.3 V +10%/

* 10% core power supply

* 2.5 V or 3.3 V I/O supply

* LBO pin for Linear or

GS8161E18DD General Description

Applications The GS8161E18D(GT/D)/GS8161E32D(D)/GS8161D36D(GT/D) is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in syn.

GS8161E18DD Datasheet (1.19 MB)

GS8161E18DD Datasheet Preview — Preview of GS8161E18DD PDF

Datasheet Details

Part number:

GS8161E18DD

Manufacturer:

GSI Technology

File Size:

1.19 MB

Description:

18mb syncburst srams.
GS8161E18D(GT/D)/GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb SyncB.

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GS8161E18DD 18Mb SyncBurst SRAMs GSI Technology

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GS8161E18DD Features

GS8161E18DD General Description

Datasheet Details

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