Datasheet4U Logo Datasheet4U.com

N08L163WC2C - 8Mb Ultra-Low Power Asynchronous CMOS SRAM

Datasheet Summary

Description

3 A0 A3 A5 A17 2 OE UB I/O10 I/O11 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte

Features

  • Single Wide Power Supply Range 2.2 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 1.5mA at 3.0V and 1µs(Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.5V.
  • Very fast output enable access time 25ns OE access time.
  • Automatic power down to standby mode.

📥 Download Datasheet

Datasheet preview – N08L163WC2C

Datasheet Details

Part number N08L163WC2C
Manufacturer NanoAmp Solutions
File Size 269.03 KB
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N08L163WC2C Datasheet
Additional preview pages of the N08L163WC2C datasheet.

📁 Similar Datasheet

  • N08L6182A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit (ON Semiconductor)
  • N08L63W2A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit (ON Semiconductor)
  • N0800S - NPN SILICON EPITAXIAL TRANSISTOR (Renesas)
  • N080ICE-GB0 - LCD (INNOLUX)
  • N080ICE-GB1 - LCD MODULE (INNOLUX)
  • N0882NC400 - Phase Control Thyristor (WESTCODE)
  • N0882NC420 - HIGH POWER THYRISTOR (YZPST)
  • N0882NC420 - Phase Control Thyristor (WESTCODE)
  • N0882NC440 - Phase Control Thyristor (WESTCODE)
  • N0882NC450 - Phase Control Thyristor (WESTCODE)
Other Datasheets by NanoAmp Solutions
  • N08L163WC2A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM
  • N08L163WC1C - 8Mb Ultra-Low Power Asynchronous CMOS SRAM
  • N08L1618C2A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM
  • N08L083WC2C - 8Mb Ultra-Low Power Asynchronous CMOS SRAM
  • N08M163WL1A - 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
  • N08M163WL1A - 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
  • N08T1630CXB - 8Mb Ultra-Low Power Asynchronous CMOS SRAM
  • N08T1630CXB - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit

Full PDF Text Transcription

Click to expand full text
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC2C Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device.
Published: |