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N16T1618A1A Datasheet 16m Yltra Low Power CMOS Psram

Manufacturer: NanoAmp Solutions

Overview: www.DataSheet4U.com NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1618C2(D1/A1)A Advance Information 16Mb Ultra-Low Power Asynchronous CMOS PSRAM 1M x 16 bit Overview The N16T1618C2(D1/A1)A is an integrated memory device containing a 16 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1,048,576 words by 16 bits. It is designed to be compatible in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. The device is available in a 2 CE (chip enable) version and two ZZ (deep sleep) versions. The ZZ version includes several power saving modes: a deep sleep mode where data is not retained in the array and partial array refresh mode where data is retained in a portion of the array. Both these modes reduce standby current drain. The VFBGA package has separate power rails, VccQ and VssQ for the I/O to be run from a separate power supply from the device core.

Datasheet Details

Part number N16T1618A1A
Manufacturer NanoAmp Solutions
File Size 392.13 KB
Description 16M Yltra Low Power CMOS PSRAM
Datasheet N16T1618A1A_NanoAmpSolutions.pdf

General Description

s 3 A0 A3 A5 A17 2 OE UB I/O10 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2/ ZZ I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A19 WE CE1 CE2 ZZ OE LB

Key Features

  • Dual voltage for Optimum Performance VCCQ and VSSQ for separate I/O power rails Vcc - 1.65V to 2.2 V Vccq - 1.65V to 3.6V.
  • Fast Cycle Times TACC < 85 nS.
  • Very low standby current ISB < 40µA @ 1.8V.
  • Very low operating current Icc < 25mA.
  • Memory expansion with CE and OE.
  • Automatic power down mode.
  • 48-Pin VFBGA, Wafers Available Product Family Part Number N16T1618C2AZ N16T1618D1AZ N16T1618A1AZ Feature 2 CE Deep Sleep Disabled Deep Sl.

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