Si4606 Datasheet N+P Complementary Enhancement MOSFET

Manufacturer: Nanxin

Si4606 n+p complementary enhancement mosfet by Nanxin - Datasheet Preview

Datasheet Details

Part number	Si4606
Manufacturer	Nanxin
File Size	465.83 KB
Description	N+P Complementary Enhancement MOSFET
Download	Si4606 Download (PDF)

General Description

1 Si4606 N-Channel Electrical Characteristics at Ta=250C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay

Key Features

Low On resistance.
+4.5V drive.
RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD PT Tch Tstg PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mo.

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