Datasheet4U Logo Datasheet4U.com

Si4435 Datasheet P-channel Enhancement MOSFET

Manufacturer: Nanxin

Datasheet Details

Part number Si4435
Manufacturer Nanxin
File Size 303.73 KB
Description P-Channel Enhancement MOSFET
Datasheet Si4435-Nanxin.pdf

Key Features

  • Low On resistance.
  • -4.5V drive.
  • RoHS compliant. Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm).

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Vishay Siliconix Logo SI4435BDY P-Channel 30-V (D-S) MOSFET Vishay Siliconix
Kexin Logo SI4435DY P-Channel MOSFET Kexin
Fairchild Semiconductor Logo SI4435DY 30V P-Channel MOSFET Fairchild Semiconductor
onsemi Logo SI4435DY P-Channel MOSFET onsemi
International Rectifier Logo SI4435DY Power MOSFET International Rectifier

More Datasheets from Nanxin

Part Number Description
Si4407 P-Channel Enhancement MOSFET
Si4606 N+P Complementary Enhancement MOSFET
Si4953 Dual P-Channel MOSFET

Si4435 Distributor