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SI4435BDY - P-Channel 30-V (D-S) MOSFET

General Description

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Key Features

  • ID (A).
  • 9.1.
  • 6.9 rDS(on) (W) 0.020 @ VGS =.
  • 10 V 0.035 @ VGS =.
  • 4.5 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS Compliant Available.

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Datasheet Details

Part number SI4435BDY
Manufacturer Vishay
File Size 88.24 KB
Description P-Channel 30-V (D-S) MOSFET
Datasheet download datasheet SI4435BDY Datasheet

Full PDF Text Transcription (Reference)

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Si4435BDY www.DataSheet4U.com Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −30 FEATURES ID (A) −9.1 −6.9 rDS(on) (W) 0.020 @ VGS = −10 V 0.035 @ VGS = −4.