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P-Channel 30-V (D-S) MOSFET
Si4431ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.030 @ VGS = –10 V –30
0.052 @ VGS = –4.5 V
ID (A)
–7.2 –5.5
FEATURES D TrenchFETr Power MOSFET
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4431ADY-T1 Si4431ADY-T1—E3 (Lead (Pb)-free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage Gate-Source Voltage
VDS –30 VGS "20
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
ID
IDM IS
PD TJ, Tstg
–7.2
–5.3
–5.8
–4.2
–30
–2.1
–1.3
2.5 1.35
1.6 0.
SI4431ADY Datasheet
