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SI4435DY - P-Channel MOSFET

Key Features

  • s.
  • VDS=-30V.
  • RDS(on)=0.02Ω@VGS=-10V.
  • RDS(on)=0.035Ω@VGS=-4.5V P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 MOSFET 1.50 0.15 +0.040.21 -0.02 S G D.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ, Tstg S1 S2 S3 G4 Top View Rating -30 ±20 -8.8 -50 2.5 5.

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SSMMDD TTyyppee ■ Features ● VDS=-30V ● RDS(on)=0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 MOSFET 1.50 0.15 +0.040.21 -0.02 S G D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ, Tstg S1 S2 S3 G4 Top View Rating -30 ±20 -8.8 -50 2.5 50 -55 to 150 Unit V V A A W ℃/W ℃ 8D 7D 6D 5D www.kexin.com.