SI4435DY
Overview
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
- -8.8 A, -30 V RDS(ON) = 20 mΩ @ VGS = -10 V RDS(ON) = 35 mΩ @ VGS = -4.5 V
- Low gate charge (17nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
