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P-Channel 30-V (D-S) MOSFET
Si4435DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.02 @ VGS = –10 V –30
0.035 @ VGS = –4.5 V
ID (A)
–8.0 –6.0
FEATURES
D Lead (Pb)-Free Version is RoHS Compliant
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
Ordering Information: Si4435DY-T1–REV A Si4435DY-T1–A–E3 (Lead (Pb)-Free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_ UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
–30 "20 –8.0 –6.4 –50 –2.1 2.5 1.
Si4435DY Datasheet
