Datasheet Details
| Part number | SI4435DY |
|---|---|
| Manufacturer | onsemi |
| File Size | 276.86 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 SI4435DY Datasheet
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General Description
This P
advanced POWERTRENCH process.
25 V).
Key Features
- RDS(ON) = 20 mW @ VGS =.
- 10 V.
- RDS(ON) = 35 mW @ VGS =.
- 4.5 V.
- Low Gate Charge (17 nC Typical).
- Fast Switching Speed.
- High Performance Trench Technology for Extremely Low RDS(ON).
- High Power and Current Handling Capability.
- This Device is Pb.
- Free and Halide Free.