SI4435DY Description
This P−Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V 25 V).
SI4435DY Key Features
- RDS(ON) = 20 mW @ VGS = -10 V
- RDS(ON) = 35 mW @ VGS = -4.5 V
- Low Gate Charge (17 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This Device is Pb-Free and Halide Free