SI4435DY Datasheet

The SI4435DY is a Power MOSFET.

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Part NumberSI4435DY
ManufacturerInternational Rectifier
Overview These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designe. = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Paramete.
Part NumberSI4435DY
DescriptionP-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SSMMDD TTyyppee ■ Features ● VDS=-30V ● RDS(on)=0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 MOSFET 1.50 0.15 +0.040.21 -0.02 S G D ■ Absolute Maximum Ra.
* VDS=-30V
* RDS(on)=0.02Ω@VGS=-10V
* RDS(on)=0.035Ω@VGS=-4.5V P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 MOSFET 1.50 0.15 +0.040.21 -0.02 S G D
* Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power D.
Part NumberSI4435DY
DescriptionP-Channel MOSFET
Manufactureronsemi
Overview This P−Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.
* RDS(ON) = 20 mW @ VGS =
*10 V
* RDS(ON) = 35 mW @ VGS =
*4.5 V
* Low Gate Charge (17 nC Typical)
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability
* This Device is Pb
*Free and Halide Free ABSOLUTE MAXIMUM RATINGS (TA.
Part NumberSI4435DY
Description30V P-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive v.
*
*8.8 A,
*30 V RDS(ON) = 20 mΩ @ VGS =
*10 V RDS(ON) = 35 mΩ @ VGS =
*4.5 V
* Low gate charge (17nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Ma.

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