SI4435DY Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability...
SI4435DY Key Features
- P-Channel MOSFET S
- Surface Mount S
- Available in Tape & Reel