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Si4430DY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.004 (typ)@ VGS = 10 V 0.008 @ VGS = 4.5 V
ID (A)
"23 "17
D
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "20 "23 "19 "60 2.9 3.5 2.2
Steady State
Unit
V
"15 "12 A
1.3 1.