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Si4433DY
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New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.110 @ VGS = –4.5 V –20 0.160 @ VGS = –2.5 V 0.240 @ VGS = –1.8 V
FEATURES
ID (A)
–3.9 –3.2 –2.6
D TrenchFETr Power MOSFET D Fast Switching
APPLICATION
D DC-DC Conversion D Asynchronous Buck Converter D Voltage Inverter
S
SO-8
S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID –2.8 IDM IS –2.1 2.5 1.
SI4433DY Datasheet
