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NT5TU32M16DG Datasheet 512Mb DDR2 SDRAM

Manufacturer: Nanya

Download the NT5TU32M16DG datasheet PDF. This datasheet also includes the NT5TU64M8DE variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (NT5TU64M8DE_Nanya.pdf) that lists specifications for multiple related part numbers.

General Description

The 512Mbit Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRA

Overview

NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM                                        Feature CAS Latency Frequency -3C/3CI* Speed Bins (DDR2-667-CL5) Parameter Clock Frequency Min.

125 15 15 60 45 5 3.75 3 Max.

333 70K 8 8 8 (DDR2-800-CL5) Min.

Key Features

  • (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) normal and weak strength data-output driver, (4) variable data-output impedance adjustment and (5) an ODT (On-Die Termination) function. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a sou.