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NT5TU128M4CE Datasheet 512Mb DDR2 SDRAM C-Die

Manufacturer: Nanya

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General Description

The 512Mb Double-Data-Rate-2 (DDR2) DRAMs is a highspeed CMOS Double Data Rate 2 SDRAM containing 536,870,912 bits.

It is internally configured as a quad-b

Overview

NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die.

Key Features

  • 1.8V ± 0.1V Power Supply Voltage.
  • Programmable CAS Latency: 3, 4, 5, and 6.
  • Programmable Additive Latency: 0, 1, 2, 3, and 4.
  • Write Latency = Read Latency -1.
  • Programmable Burst Length: 4 and 8.
  • Programmable Sequential / Interleave Burst.
  • OCD (Off-Chip Driver Impedance Adjustment).
  • ODT (On-Die Termination).
  • 4 bit prefetch architecture.
  • 1k page size for x 4 & x 8, 2k page size for x16.
  • Data-Strobe.

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