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NT5TU128M4CE - 512Mb DDR2 SDRAM C-Die

Description

The 512Mb Double-Data-Rate-2 (DDR2) DRAMs is a highspeed CMOS Double Data Rate 2 SDRAM containing 536,870,912 bits.

Features

  • 1.8V ± 0.1V Power Supply Voltage.
  • Programmable CAS Latency: 3, 4, 5, and 6.
  • Programmable Additive Latency: 0, 1, 2, 3, and 4.
  • Write Latency = Read Latency -1.
  • Programmable Burst Length: 4 and 8.
  • Programmable Sequential / Interleave Burst.
  • OCD (Off-Chip Driver Impedance Adjustment).
  • ODT (On-Die Termination).
  • 4 bit prefetch architecture.
  • 1k page size for x 4 & x 8, 2k page size for x16.
  • Data-Strobe.

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Datasheet Details

Part number NT5TU128M4CE
Manufacturer Nanya
File Size 1.80 MB
Description 512Mb DDR2 SDRAM C-Die
Datasheet download datasheet NT5TU128M4CE Datasheet

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Full PDF Text Transcription

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NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Programmable CAS Latency: 3, 4, 5, and 6 • Programmable Additive Latency: 0, 1, 2, 3, and 4 • Write Latency = Read Latency -1 • Programmable Burst Length: 4 and 8 • Programmable Sequential / Interleave Burst • OCD (Off-Chip Driver Impedance Adjustment) • ODT (On-Die Termination) • 4 bit prefetch architecture • 1k page size for x 4 & x 8, 2k page size for x16 • Data-Strobes: Bidirectional, Differential • 4 internal memory banks • Strong and Weak Strength Data-Output Driver • Auto-Refresh and Self-Refresh • Power Saving Power-Down modes • 7.8 µs max.
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