Datasheet Details
| Part number | NT5DS16M16BS |
|---|---|
| Manufacturer | Nanya Techology |
| File Size | 1.36 MB |
| Description | (NT5DSxxMxBx) 256Mb DDR SDRAM |
| Datasheet |
 NT5DS16M16BS Datasheet
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General Description
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits.
It is internally configured as a quad-bank DRAM.
tion may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.
Key Features
- CAS Latency and Frequency CAS Latency 3 2.5 Maximum Operating Frequency (MHz) DDR400B (-5T) 200 166.
- Double data rate architecture: two data transfers per clock cycle.
- Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver.
- DQS is edge-aligned with data for reads and is centerali.